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| 2SD1974 Silicon NPN Epitaxial Application Low frequency power amplifier Outline UPAK 1 3 2 1 2, 4 4 ID 1. Base 2. Collector 3. Emitter 4. Collector (Flange) 3 2SD1974 Absolute Maximum Ratings (Ta = 25C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current E to C diode forward current Collector power dissipation Junction temperature Storage temperature Note: Symbol VCBO VCEO VEBO IC ic (peak) ID PC * Tj Tstg 1 Ratings 25 25 6 0.8 1.5 0.6 1.0 150 -55 to +150 Unit V V V A A A W C C 1. Value on the alumina ceramic board (12.5 x 20 x 0.7 mm) Electrical Characteristics (Ta = 25C) Item Collector to base breakdown voltage Symbol V(BR)CBO Min 25 25 25 6 -- -- -- 250 -- -- Typ -- -- -- -- -- -- -- -- -- -- Max -- 35 35 -- 0.2 0.5 0.2 1200 0.4 1.5 V V Unit V V V V A A A Test conditions I C = 10 A, IE = 0 I C = 1 mA, RBE = I C = 0.8 A, RBE = , L = 20 mH I E = 10 A, IC = 0 VCB = 20 V, IE = 0 VCE = 20 V, RBE = VEB = 5 V, IC = 0 VCE = 2 V, IC = 0.1 A*1 I C = 0.8 A, IB = 80 mA*1 I D = 0.6 A*1 Collector to emitter breakdown V(BR)CEO voltage Collector to emitter sustaining voltage Emitter to base breakdown voltage Collector cutoff current VCEO(sus) V(BR)EBO I CBO I CEO Emitter cutoff current DC current transfer ratio Collector to emitter saturation voltage E to C diode forward voltage Notes: 1. Pulse test 2. Marking is "ES". I EBO hFE VCE(sat) VD 2 2SD1974 Maximum Collector Dissipation Curve 1.2 Collector Power Dissipation PC (W) (on the alumina ceramic board) Collector Current IC (A) Area of Safe Operation 10 3 iC(peak) 1.0 IC(max) 0.3 0.1 0.03 Ta = 25C 1 Shot Pulse D C O pe PW = 10 1 0.8 m s m s ra tio n 0.4 0 50 100 150 Ambient Temperature Ta (C) 0.01 0.01 0.3 1.0 3 10 30 100 Collector to Emitter Voltage VCE (V) Area of Safe Operation of Emitter to Collector Diode 10 Ta = 25C 1 Shot Pulse Collector Current IC (A) Diode Current ID (A) 8 0.8 1.0 Typical Output Characteristics 1.8 1.6 1.4 1.2 1.0 0.8 6 0.6 4 0.4 0.6 0.4 2 0.2 0.2 mA IB = 0 Ta = 25C 0 0.1 0.3 1.0 3 Pulse Width PW (ms) 10 0 2 4 6 8 10 Collector to Emitter Voltage VCE (V) 3 2SD1974 Typical Transfer Characteristics Collector to Emitter Saturation Voltage VCE(sat) (V) Base to Emitter Saturation Voltage VBE(sat) (V) 1.0 10 3 1.0 0.3 0.1 V CE t) Saturation Voltage vs. Collector Current IC = 10 IB Ta = 25C Pulse Collector Current IC (A) 0.8 VBE(sat) 0.6 0.4 VCE = 2 V Ta = 25C Pulse 0.4 0.8 1.2 1.6 2.0 Base to Emitter Voltage VBE (V) (sa 0.2 0.03 0.01 0.001 0.003 0.01 0.03 0.1 0.3 Collector Current IC (A) 0 1.0 DC Current Transfer Ratio vs. Collector Current 10,000 DC Current Transfer Ratio hFE 3,000 1,000 300 100 30 10 0.001 0.003 0.01 0.03 0.1 0.3 Collector Current IC (A) 25 Ta = 75C -25 VCE = 2 V Pulse Diode Current ID (A) 0.8 1.0 Typical Characteristics of Emitter to Collector Diode 0.6 0.4 0.2 Ta = 25C Pulse 0.4 0.8 1.2 1.6 2.0 Emitter to Collector Forward Voltage VD (V) 1.0 0 4 2SD1974 Collector Output Capacitance vs. Collector to Base Voltage Collector Output Capacitance Cob (pF) 1,000 300 100 30 10 3 1 0.3 Ta = 25C f = 1 MHz IE = 0 1.0 3 10 30 Collector to Base Voltage VCB (V) 5 Unit: mm 4.5 0.1 0.4 1.8 Max 1 1.5 0.1 0.44 Max (2.5) (1.5) 1.5 1.5 3.0 0.8 Min 0.44 Max Hitachi Code JEDEC EIAJ Weight (reference value) (0.4) 0.53 Max 0.48 Max 2.5 0.1 4.25 Max UPAK -- Conforms 0.050 g (0.2) Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi's or any third party's patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party's rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi's sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi's sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 URL NorthAmerica : http:semiconductor.hitachi.com/ Europe : http://www.hitachi-eu.com/hel/ecg Asia (Singapore) : http://www.has.hitachi.com.sg/grp3/sicd/index.htm Asia (Taiwan) : http://www.hitachi.com.tw/E/Product/SICD_Frame.htm Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm Japan : http://www.hitachi.co.jp/Sicd/indx.htm For further information write to: Hitachi Semiconductor (America) Inc. 179 East Tasman Drive, San Jose,CA 95134 Tel: <1> (408) 433-1990 Fax: <1>(408) 433-0223 Hitachi Europe GmbH Electronic components Group Dornacher Strae 3 D-85622 Feldkirchen, Munich Germany Tel: <49> (89) 9 9180-0 Fax: <49> (89) 9 29 30 00 Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 778322 Hitachi Asia Pte. Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 049318 Tel: 535-2100 Fax: 535-1533 Hitachi Asia Ltd. Taipei Branch Office 3F, Hung Kuo Building. No.167, Tun-Hwa North Road, Taipei (105) Tel: <886> (2) 2718-3666 Fax: <886> (2) 2718-8180 Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Tsim Sha Tsui, Kowloon, Hong Kong Tel: <852> (2) 735 9218 Fax: <852> (2) 730 0281 Telex: 40815 HITEC HX Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan. |
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